Design of patterned sapphire substrates in flip-chip LEDs for improvement of light-extraction efficiencies
Sign Up to like & getrecommendations! Published in 2018 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-018-1414-3
Abstract: Patterned sapphire substrates (PSSs) in flip chip light-emitting diodes (FC-LEDs) were designed to improve the light extraction efficiencies (LEEs). Two typical types were considered in the cross-section of the PSS pattern; an extruded type and… read more here.
Keywords: patterned sapphire; flip chip; light extraction; extraction efficiencies ... See more keywords
Characteristic of SiC Slurry in Ultra Precision Lapping of Sapphire Substrates
Sign Up to like & getrecommendations! Published in 2021 at "International Journal of Precision Engineering and Manufacturing"
DOI: 10.1007/s12541-021-00521-1
Abstract: A method is proposed in this paper to prepare a SiC slurry with SiC particles selected by an ultrasonic-assisted elutriation method to reduce substrate surface damage caused by abrasive particles during lapping. Sapphire substrate lapping… read more here.
Keywords: slurry; sapphire substrates; lapping sapphire; sic slurry ... See more keywords
Liquid-phase growth of few-layered graphene on sapphire substrates using SiC micropowder source
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.11.053
Abstract: Abstract We demonstrated direct synthesis of graphene films consisting of a few layers (few-layered graphene) on sapphire substrates by liquid-phase growth (LPG), using liquid Ga as the melt and SiC micropowder as the source material.… read more here.
Keywords: graphene sapphire; liquid phase; phase growth; layered graphene ... See more keywords
Use of mist chemical vapor deposition to impart ferroelectric properties to ε-Ga2O3 thin films on SnO2/c-sapphire substrates
Sign Up to like & getrecommendations! Published in 2018 at "Materials Letters"
DOI: 10.1016/j.matlet.2018.08.082
Abstract: Abstract e-Ga2O3 has a polar crystal structure with non-inversion-symmetry along the direction of the c-axis. In a previous study, the ferroelectric hysteresis loop of e-Ga2O3 was successfully measured using a planar-plate capacitor comprising a thick… read more here.
Keywords: thin films; ferroelectric properties; ga2o3 thin; properties ga2o3 ... See more keywords
Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c22626
Abstract: Wide-band-gap layered semiconductor hexagonal boron nitride (h-BN) is attracting intense interest due to its unique optoelectronic properties and versatile applications in deep ultraviolet optoelectronic and two-dimensional electronic devices. However, it is still a great challenge… read more here.
Keywords: boron nitride; low temperature; growth; sapphire substrates ... See more keywords
Layered Graphene Growth Directly on Sapphire Substrates for Applications
Sign Up to like & getrecommendations! Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.2c00554
Abstract: Layer-by-layer graphene growth is demonstrated by repeating CVD growth cycles directly on sapphire substrates. Improved field-effect mobility values are observed for the bottom-gate transistors fabricated by using the bilayer graphene channel, which indicates an improved… read more here.
Keywords: graphene; graphene growth; growth; sapphire substrates ... See more keywords
Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers
Sign Up to like & getrecommendations! Published in 2017 at "AIP Advances"
DOI: 10.1063/1.5004125
Abstract: Epitaxial VO2/SnO2 thin film heterostructures were deposited on m-cut sapphire substrates via pulsed laser deposition. By adjusting SnO2 (150 nm) growth conditions, we are able to control the interfacial strain between the VO2 film and… read more here.
Keywords: sno2 buffer; buffer layers; epitaxial vo2; vo2 ... See more keywords
Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0015263
Abstract: Deep UV-LEDs (DUV-LEDs) emitting at 233 nm with an emission power of (1.9 ± 0.3) mW and an external quantum efficiency of (0.36 ± 0.07) % at 100 mA are presented. The entire DUV-LED process chain was optimized including the reduction… read more here.
Keywords: deep leds; 233 algan; power 233; milliwatt power ... See more keywords
Very thin (111) NiO epitaxial films grown on c-sapphire substrates by pulsed laser deposition technique
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/abed8e
Abstract: (111) NiO epitaxial layers are grown on c-sapphire substrates by pulsed laser deposition technique. Structural and morphological properties of the films are studied using in-plane as well as out-of-plane high resolution x-ray diffraction and atomic… read more here.
Keywords: technique; nio epitaxial; substrates pulsed; grown sapphire ... See more keywords
Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy
Sign Up to like & getrecommendations! Published in 2021 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ac0525
Abstract: AlN/GaN resonant tunneling diodes (RTDs) were grown separately on freestanding GaN (FS-GaN) substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy (PA-MBE). Room temperature negative differential resistance (NDR) was obtained under forward bias for the RTDs… read more here.
Keywords: substrates sapphire; sapphire substrates; freestanding gan; resonant tunneling ... See more keywords
Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductors"
DOI: 10.1134/s1063782619060150
Abstract: This work reports on the epitaxial-film growth and characterization of a new wide-gap semiconductor α-Ga2O3. Layers are deposited by chloride vapor phase epitaxy on sapphire substrates with a basal orientation. The thickness of the layers… read more here.
Keywords: ga2o3 layers; thick ga2o3; ga2o3; layers sapphire ... See more keywords