Ballistic Quantum Transport of Sub‐10 nm 2D Sb2Te2Se Transistors
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DOI: 10.1002/aelm.201900813
Abstract: 2D materials, due to their ultrathin dangling‐bond‐free configuration and excellent electrostatic control, have potential as possible Si‐alternative building blocks for future competitive devices. Exploring 2D electronic materials with suitable band gap and high mobility is… read more here.
Keywords: quantum transport; quantum; sb2te2se; ballistic quantum ... See more keywords