Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb2Te3 Microstructures
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DOI: 10.1021/acsomega.2c05859
Abstract: Doped Sb2Te3 narrow-band-gap semiconductors have been attracting considerable attention for different electronic and thermoelectric applications. Trivalent samarium (Sm)- and indium (In)-doped Sb2Te3 microstructures have been synthesized by the economical solvothermal method. Powder X-ray diffraction (PXRD)… read more here.
Keywords: undoped sb2te3; effect doping; sb2te3 microstructures; doped sb2te3 ... See more keywords