Terahertz generation measurements of multilayered GeTe-Sb2Te3 phase change materials.
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DOI: 10.1364/ol.44.001355
Abstract: Multilayered structures of GeTe and Sb2Te3 phase change material, also referred to as interfacial phase change memory (iPCM), provide superior performance for nonvolatile electrical memory technology in which the atomically controlled structure plays an important… read more here.
Keywords: sb2te3 phase; generation measurements; phase change; phase ... See more keywords