Performance Improvement of SONOS Device as UV Total Dose Nonvolatile Sensor with Bottom-silicon-rich and Top-nitrogen-rich Nitride Structure
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DOI: 10.18494/sam.2019.2332
Abstract: Silicon–silicon dioxide–silicon nitride–silicon dioxide–silicon (SONOS) capacitor devices with a bottom-silicon-rich and top-nitrogen-rich nitride bilayer stacked trapping layer (hereafter, SBNT-SONOS) have potential applications in UV total dose (TD) nonvolatile sensors. UV radiation induces a significant increase… read more here.
Keywords: bottom silicon; silicon; silicon rich; sbnt sonos ... See more keywords