Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors
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DOI: 10.1038/s41598-020-59083-3
Abstract: A general problem for semiconductor applications is that very slow deposition on expensive single-crystal substrates yields high crystalline quality with excellent electro-optical properties, but at prohibitive costs and throughput for many applications. In contrast, rapid… read more here.
Keywords: single crystal; epitaxy large; epitaxy; scalable ultrafast ... See more keywords