Micron-Scale Annealing for Ohmic Contact Formation Applied in GaN HEMT Gate-First Technology
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DOI: 10.1109/led.2018.2877717
Abstract: High-temperature thermal annealing process for ohmic contact hinders the development of monolithic integration of heterogeneous functional devices as well as gate-first approach for the GaN transistor. Other than reducing processing temperature, we developed a selective… read more here.
Keywords: ohmic contact; micron scale; gate first; scale annealing ... See more keywords