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Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400045
Abstract: The rapid growth of data‐intensive applications has significantly heightened the concerns about power consumption in current computing systems. From this perspective, there have been substantial efforts to implement ultra‐low power systems by integrating nanoelectromechanical non‐volatile…
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Keywords:
cmos;
non volatile;
electrode configuration;
plane electrode ... See more keywords
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Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0147587
Abstract: Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate stable RTN in planar bulk-Si metal-oxide-semiconductor (MOS) transistors and in Si fin field-effect…
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Keywords:
random telegraph;
noise nanometer;
noise;
scale cmos ... See more keywords