Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation
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DOI: 10.1063/5.0147587
Abstract: Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate stable RTN in planar bulk-Si metal-oxide-semiconductor (MOS) transistors and in Si fin field-effect… read more here.
Keywords: random telegraph; noise nanometer; noise; scale cmos ... See more keywords