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Published in 2017 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2016.2628967
Abstract: This paper investigates the intrinsic drain-induced barrier lowering (DIBL) characteristics of highly-scaled tri-gate n-MOSFETs with InGaAs channel based on ITRS 2021 technology node through numerical simulation corroborated with theoretical calculation. This paper indicates that, when…
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Keywords:
tri gate;
gate;
sensitivity;
dibl characteristics ... See more keywords