Effects of Channel Length Scaling on the Electrical Characteristics of Multilayer MoS2 Field Effect Transistor
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DOI: 10.3390/mi14020275
Abstract: With the rapid miniaturization of integrated chips in recent decades, aggressive geometric scaling of transistor dimensions to nanometric scales has become imperative. Recent works have reported the usefulness of 2D transition metal dichalcogenides (TMDs) like… read more here.
Keywords: transistor; effects channel; channel length; length scaling ... See more keywords