Polarity-Controlled GaN Epitaxial Films Achieved via Controlling the Annealing Process of ScAlMgO4 Substrates and the Corresponding Thermodynamic Mechanisms
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DOI: 10.1021/acs.jpcc.8b04410
Abstract: Polarity-controlled GaN epitaxial films with Ga- and N-polarity are intentionally obtained by controlling annealing processes of ScAlMgO4 substrates. It is proved by high-angle annular dark-field scanning transmission electron microscopy, in situ reflection high-energy electron diffraction,… read more here.
Keywords: microscopy; epitaxial films; polarity; gan epitaxial ... See more keywords