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   Articles with "scaln" as a keyword



Unveiling the Pockels coefficient of ferroelectric nitride ScAlN

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recommendations! Published in 2024 at "Nature Communications"

DOI: 10.1038/s41467-024-53895-x

Abstract: Nitride ferroelectrics have recently emerged as promising alternatives to oxide ferroelectrics due to their compatibility with mainstream semiconductor processing. ScAlN, in particular, has exhibited remarkable piezoelectric coupling strength (K2) comparable to that of lithium niobate,… read more here.

Keywords: pockels coefficient; pockels effect; scaln; ferroelectric nitride ... See more keywords

Theoretical investigation of Rayleigh surface acoustic wave propagation characteristics in c-axis-zigzag ScAlN film/silicon substrate structure

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recommendations! Published in 2023 at "Journal of Applied Physics"

DOI: 10.1063/5.0144838

Abstract: Surface acoustic wave (SAW) resonators are key components of mobile communication systems, and the development of wideband SAW resonators is especially required because next-generation mobile communication systems require high-speed data transmission using wide frequency bands.… read more here.

Keywords: film silicon; scaln film; film; silicon substrate ... See more keywords

Structural and optical properties of epitaxial ScxAl1−xN coherently grown on GaN bulk substrates by sputtering method

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recommendations! Published in 2024 at "Applied Physics Letters"

DOI: 10.1063/5.0213662

Abstract: Three scandium aluminum nitride (ScAlN) thin films with different Sc compositions of 6%, 10%, and 14% were heteroepitaxially grown on n-type GaN bulk substrates by a low-temperature sputtering method. Atomically flat and smooth surfaces were… read more here.

Keywords: bulk substrates; grown gan; coherently grown; scaln ... See more keywords

Bimorph Dual-Electrode ScAlN PMUT with Two Terminal Connections

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recommendations! Published in 2022 at "Micromachines"

DOI: 10.3390/mi13122260

Abstract: This paper presents a novel bimorph Piezoelectric Micromachined Ultrasonic Transducer (PMUT) fabricated with 8-inch standard CMOS-compatible processes. The bimorph structure consists of two layers of 20% scandium-doped aluminum nitride (Sc0.2Al0.8N) thin films, which are sandwiched… read more here.

Keywords: terminal connections; outer ring; scaln; plate electrodes ... See more keywords