MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate
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DOI: 10.1016/j.jcrysgro.2018.10.024
Abstract: Abstract We have successfully obtained a metalorganic vapor phase epitaxy (MOVPE) grown GaInAsP/GaInAsP separate confinement heterostructure structure multi-quantum well (SCH-MQW) laser diode (LD) on a directly InP/Si substrate. InP/Si substrate was prepared by the hydrophilic… read more here.
Keywords: sch mqw; movpe grown; inp substrate; mqw laser ... See more keywords