Quasiconformal deformations of complex hyperbolic p-Schottky groups
Sign Up to like & getrecommendations! Published in 2017 at "Geometriae Dedicata"
DOI: 10.1007/s10711-016-0204-y
Abstract: In this paper, we generalize a Schottky group construction to complex hyperbolic space. In particular, we construct a fundamental domain whose sides consist of disjoint non-asymptotic packs for the action of the Schottky group acting… read more here.
Keywords: schottky group; deformations complex; quasiconformal deformations; schottky ... See more keywords
Origin of work function engineering of silver oxide for an In–Ga–Zn–O Schottky diode
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2019.144519
Abstract: Abstract The oxidation states of silver oxide (AgxO) films were investigated to discuss the origin of Schottky barrier formed at an In–Ga–Zn–O (IGZO) and AgxO hetero interface. The oxidation states of AgxO films were varied… read more here.
Keywords: work; silver oxide; origin; work function ... See more keywords
Thermal stability of oxidized noble metal Schottky contacts to ZnO
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2017.01.016
Abstract: Abstract Thermally stable oxidized palladium (PdOx, x=1.4) and oxidized iridium (IrOx, x=1.9) Schottky contacts (SCs) that showed strong rectification at 180 °C were fabricated on the Zn-polar (0001) face of hydrothermally-grown single crystal ZnO wafers, using… read more here.
Keywords: schottky contacts; pdox irox; irox scs; schottky ... See more keywords
Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.04.012
Abstract: Abstract Au Schottky barrier contacts (SBDs) were DC sputter deposited on Si doped n-type GaAs at a power of 150 W. Deep-level transient spectroscopy (DLTS) and Laplace DLTS were used to characterize the sputter-induced defects near… read more here.
Keywords: schottky; sputter; properties transformation; transformation kinetics ... See more keywords
A 4H-SiC junction barrier Schottky diode with segregated floating trench and super junction
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.07.030
Abstract: Abstract A 4H-SiC Junction Barrier Schottky Diode with Segregated Floating Trench and Super Junction (S-FT SJ JBS) is presented in this paper. By adopting segregated integrated trench and super junction, the high electric field not… read more here.
Keywords: floating trench; super junction; diode; trench super ... See more keywords
Optimal estimation of Schottky diode parameters using a novel optimization algorithm: Equilibrium optimizer
Sign Up to like & getrecommendations! Published in 2020 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2020.106665
Abstract: Abstract This paper presents a new approach based on a novel optimization algorithm (Equilibrium optimizer) to determine the critical characteristic parameters of the Au/GaN/GaAs Schottky barrier diodes, such as ideality factor, series resistance and barrier… read more here.
Keywords: equilibrium; schottky; optimization algorithm; novel optimization ... See more keywords
Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode
Sign Up to like & getrecommendations! Published in 2020 at "Vacuum"
DOI: 10.1016/j.vacuum.2019.109012
Abstract: Abstract This study examined the temperature-dependent current-voltage (I–V) characteristics of the Ni/Au Schottky contact to β-Ga2O3. The Au/Ni/β-Ga2O3 Schottky diode showed a good rectifying behavior. The on-resistance and rectification ratio decreased with increasing temperature, which… read more here.
Keywords: schottky barrier; barrier; temperature; diode ... See more keywords
Supermode Hybridization: A Material-Independent Route toward Record Schottky Detection Sensitivity Using
Sign Up to like & getrecommendations! Published in 2020 at "Nano letters"
DOI: 10.1021/acs.nanolett.0c02831
Abstract: Schottky photodetectors are attractive for CMOS-compatible photonic integrated circuits, but the inability to simultaneously optimize the metal emitter thickness for photon absorption and hot carrier emission limits the detection efficiency and sensitivity. Here, we propose… read more here.
Keywords: detection; volume; supermode hybridization; hybridization ... See more keywords
Record-High-Performance Hydrogenated In-Ga-Zn-O Flexible Schottky Diodes.
Sign Up to like & getrecommendations! Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c12638
Abstract: High-performance In-Ga-Zn-O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 °C. IGZO:H was prepared by Ar + O2 + H2 sputtering. IGZO:H SDs on a glass… read more here.
Keywords: schottky barrier; schottky diodes; schottky; igzo ... See more keywords
Schottky Contacts to ZnO-Nanocoated SnSe Powders by Atomic Layer Deposition
Sign Up to like & getrecommendations! Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.2c05584
Abstract: In this study, SnSe powders are nanocoated with ZnO grown by atomic layer deposition (ALD) with different ALD ZnO pulse cycles. Subsequently, the current transport mechanisms of Pt/ZnO-coated SnSe junctions are electrically investigated. A decrease… read more here.
Keywords: schottky; layer deposition; atomic layer; snse powders ... See more keywords
Graphene-silicon-on-insulator (GSOI) Schottky diode photodetectors.
Sign Up to like & getrecommendations! Published in 2018 at "Nanoscale"
DOI: 10.1039/c8nr05285a
Abstract: Graphene-silicon (GS) Schottky junctions have been demonstrated as an efficient architecture for photodetection. However, the response speed of such devices for free space light detection has so far been limited to 10s-100s of kHz for… read more here.
Keywords: silicon insulator; gsoi; graphene silicon; schottky ... See more keywords