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   Articles with "schottky" as a keyword



Dual‐Polarity Response in Self‐Powered Infrared SnTe Photodetector with Double Symmetric Schottky Junctions

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recommendations! Published in 2024 at "Advanced Optical Materials"

DOI: 10.1002/adom.202400632

Abstract: Self‐powered photodetectors with dual‐polarity response have great advantages in processing complex light information that is proven to be applied in switchable light imaging, optical communication, and spectral band distinction. Here, a novel strategy for designing… read more here.

Keywords: dual polarity; schottky; response; self powered ... See more keywords

Quasiconformal deformations of complex hyperbolic p-Schottky groups

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recommendations! Published in 2017 at "Geometriae Dedicata"

DOI: 10.1007/s10711-016-0204-y

Abstract: In this paper, we generalize a Schottky group construction to complex hyperbolic space. In particular, we construct a fundamental domain whose sides consist of disjoint non-asymptotic packs for the action of the Schottky group acting… read more here.

Keywords: schottky group; deformations complex; quasiconformal deformations; schottky ... See more keywords
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Origin of work function engineering of silver oxide for an In–Ga–Zn–O Schottky diode

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recommendations! Published in 2020 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2019.144519

Abstract: Abstract The oxidation states of silver oxide (AgxO) films were investigated to discuss the origin of Schottky barrier formed at an In–Ga–Zn–O (IGZO) and AgxO hetero interface. The oxidation states of AgxO films were varied… read more here.

Keywords: work; silver oxide; origin; work function ... See more keywords

Thermal stability of oxidized noble metal Schottky contacts to ZnO

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recommendations! Published in 2017 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2017.01.016

Abstract: Abstract Thermally stable oxidized palladium (PdOx, x=1.4) and oxidized iridium (IrOx, x=1.9) Schottky contacts (SCs) that showed strong rectification at 180 °C were fabricated on the Zn-polar (0001) face of hydrothermally-grown single crystal ZnO wafers, using… read more here.

Keywords: schottky contacts; pdox irox; irox scs; schottky ... See more keywords

Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts

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recommendations! Published in 2019 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2019.04.012

Abstract: Abstract Au Schottky barrier contacts (SBDs) were DC sputter deposited on Si doped n-type GaAs at a power of 150 W. Deep-level transient spectroscopy (DLTS) and Laplace DLTS were used to characterize the sputter-induced defects near… read more here.

Keywords: schottky; sputter; properties transformation; transformation kinetics ... See more keywords

A 4H-SiC junction barrier Schottky diode with segregated floating trench and super junction

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recommendations! Published in 2018 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2018.07.030

Abstract: Abstract A 4H-SiC Junction Barrier Schottky Diode with Segregated Floating Trench and Super Junction (S-FT SJ JBS) is presented in this paper. By adopting segregated integrated trench and super junction, the high electric field not… read more here.

Keywords: floating trench; super junction; diode; trench super ... See more keywords
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Optimal estimation of Schottky diode parameters using a novel optimization algorithm: Equilibrium optimizer

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recommendations! Published in 2020 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2020.106665

Abstract: Abstract This paper presents a new approach based on a novel optimization algorithm (Equilibrium optimizer) to determine the critical characteristic parameters of the Au/GaN/GaAs Schottky barrier diodes, such as ideality factor, series resistance and barrier… read more here.

Keywords: equilibrium; schottky; optimization algorithm; novel optimization ... See more keywords
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Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode

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recommendations! Published in 2020 at "Vacuum"

DOI: 10.1016/j.vacuum.2019.109012

Abstract: Abstract This study examined the temperature-dependent current-voltage (I–V) characteristics of the Ni/Au Schottky contact to β-Ga2O3. The Au/Ni/β-Ga2O3 Schottky diode showed a good rectifying behavior. The on-resistance and rectification ratio decreased with increasing temperature, which… read more here.

Keywords: schottky barrier; barrier; temperature; diode ... See more keywords

Supermode Hybridization: A Material-Independent Route toward Record Schottky Detection Sensitivity Using

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recommendations! Published in 2020 at "Nano letters"

DOI: 10.1021/acs.nanolett.0c02831

Abstract: Schottky photodetectors are attractive for CMOS-compatible photonic integrated circuits, but the inability to simultaneously optimize the metal emitter thickness for photon absorption and hot carrier emission limits the detection efficiency and sensitivity. Here, we propose… read more here.

Keywords: detection; volume; supermode hybridization; hybridization ... See more keywords

Record-High-Performance Hydrogenated In-Ga-Zn-O Flexible Schottky Diodes.

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recommendations! Published in 2020 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.0c12638

Abstract: High-performance In-Ga-Zn-O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 °C. IGZO:H was prepared by Ar + O2 + H2 sputtering. IGZO:H SDs on a glass… read more here.

Keywords: schottky barrier; schottky diodes; schottky; igzo ... See more keywords

Facilely Fabricated Zero-Bias Silicon-Based Plasmonic Photodetector in the Near-Infrared Region with a Schottky Barrier Properly Controlled by Nanoalloys.

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recommendations! Published in 2024 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.3c15328

Abstract: Plasmonic Schottky devices have attracted considerable attention for use in practical applications based on photoelectric conversion, because they enable light to be harvested below the bandgap of semiconductors. In particular, silicon-based (Si) plasmonic Schottky devices… read more here.

Keywords: based plasmonic; schottky barrier; schottky; silicon based ... See more keywords