Molecule-Upgraded van der Waals Contacts for Schottky-Barrier-Free Electronics.
Sign Up to like & getrecommendations! Published in 2021 at "Advanced materials"
DOI: 10.1002/adma.202104935
Abstract: The applications of any ultrathin semiconductor device are inseparable from high-quality metal-semiconductor contacts with designed Schottky barriers. Building van der Waals (vdWs) contacts of 2D semiconductors represents an advanced strategy of lowering the Schottky barrier… read more here.
Keywords: schottky barrier; van der; barrier; der waals ... See more keywords
Control of the Schottky Barrier and Contact Resistance at Metal–WSe 2 Interfaces by Polymeric Doping
Sign Up to like & getrecommendations! Published in 2020 at "Advanced electronic materials"
DOI: 10.1002/aelm.202000616
Abstract: DOI: 10.1002/aelm.202000616 devices, which can accommodate various materials via stacking. With respect to future applications, WSe2 exhibits strong potential to be used in field-effect transistors (FETs), photodetectors, light-emitting diodes, and solar cells.[5–9] The metal–semiconductor (MS)… read more here.
Keywords: contact resistance; work; schottky barrier; dopant ... See more keywords
A Current–Voltage Model for Double Schottky Barrier Devices
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202000979
Abstract: Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical properties of… read more here.
Keywords: voltage; schottky barrier; voltage characteristics; model ... See more keywords
A novel electrostatically doped ferroelectric Schottky barrier tunnel FET: process resilient design
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-017-0987-6
Abstract: This work investigates a process-variation resilient electrostatically-doped ferroelectric Schottky-barrier tunnel FET (ED-FE-SB-TFET) based on negative capacitance (NC). The key attributes of ED-FE-SB-TFET are perovskite ferroelectric (FE) gate stack-induced NC behavior and electrostatic doping to induce… read more here.
Keywords: schottky barrier; electrostatically doped; barrier; doped ferroelectric ... See more keywords
Fabrication and Characterization of Zinc Oxide/Multi-walled Carbon Nanotube Schottky Barrier Diodes
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-018-6170-4
Abstract: The interface between multi-walled carbon nanotubes and semiconductor material has important application in electronic and optoelectronic devices. This paper reports the Schottky diode characteristic of multi-walled carbon nanotube/zinc oxide (MWCNT/ZnO) interface. The ideality factor of… read more here.
Keywords: multi walled; schottky barrier; walled carbon; carbon nanotube ... See more keywords
Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer
Sign Up to like & getrecommendations! Published in 2018 at "Nano Research"
DOI: 10.1007/s12274-018-2243-1
Abstract: Doping, which is the intentional introduction of impurities into a material, can improve the metal-semiconductor interface by reducing Schottky barrier width. Here, we present high-quality two-dimensional SnS2 nanosheets with well-controlled Sb doping concentration via direct… read more here.
Keywords: sns2 monolayer; schottky barrier; doped sns2; barrier width ... See more keywords
Enormous enhancement in electrical performance of few-layered MoTe2 due to Schottky barrier reduction induced by ultraviolet ozone treatment
Sign Up to like & getrecommendations! Published in 2020 at "Nano Research"
DOI: 10.1007/s12274-020-2724-x
Abstract: Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier, which is crucial for the realization of high-performance logic components. Here, we systematically investigated a convenient and effective method,… read more here.
Keywords: schottky barrier; ozone treatment; performance; electrical performance ... See more keywords
Threshold Voltage Modeling of tri-Gate Schottky-Barrier (TGSB) Field-Effect-Transistors (FETs)
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00400-w
Abstract: In this work, a threshold voltage model of Tri-Gate Schottky-Barrier (TGSB) MOSFET is presented by coupling threshold voltage models of symmetric and asymmetric double-gate Schottky-Barrier (SB) MOSFET structures giving due weight to each structure. The… read more here.
Keywords: voltage; schottky barrier; tri gate; threshold voltage ... See more keywords
Observation of Van Hove Singularities and Temperature Dependence of Electrical Characteristics in Suspended Carbon Nanotube Schottky Barrier Transistors
Sign Up to like & getrecommendations! Published in 2018 at "Nano-Micro Letters"
DOI: 10.1007/s40820-017-0171-3
Abstract: AbstractA Van Hove singularity (VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give… read more here.
Keywords: schottky barrier; van hove; suspended carbon; nanotube schottky ... See more keywords
Fabrication of CQDs/MoS2/Mo foil for the improved electrochemical detection.
Sign Up to like & getrecommendations! Published in 2019 at "Analytica chimica acta"
DOI: 10.1016/j.aca.2019.06.025
Abstract: We proposed a new method for regulating the electrochemical signal by using Schottky barrier. The results show that the height of Schottky barrier can be altered by adsorbing charged substance to control the enhancement and… read more here.
Keywords: electrochemical detection; cqds mos2; fabrication cqds; schottky barrier ... See more keywords
Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation
Sign Up to like & getrecommendations! Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.02.189
Abstract: Abstract The effect of electron beam irradiation (EBI) on Al/n-Si Schottky diode has been studied by I–V characterization at room temperature. The behavior of the metal-semiconductor (MS) interface is analyzed by means of variations in… read more here.
Keywords: schottky barrier; barrier height; beam irradiation; electron beam ... See more keywords