Articles with "schottky contact" as a keyword



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Analysis of electrical properties of graphene–ZnO/n-Si(111) Schottky contact

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Published in 2019 at "Journal of Materials Science: Materials in Electronics"

DOI: 10.1007/s10854-019-01320-1

Abstract: In this article, the graphene (G)–ZnO composite films was prepared on the surface of n-Si(111) substrate by sol–gel method for the formation of G–ZnO/n-Si(111) Schottky contact. The results show that the growth direction of ZnO… read more here.

Keywords: schottky contact; 111 schottky; zno 111; graphene zno ... See more keywords
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Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer.

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Published in 2017 at "Nano letters"

DOI: 10.1021/acs.nanolett.6b03137

Abstract: We report the systematic experimental studies demonstrating that a graphene layer inserted at metal/n-Si(001) interface is efficient to explore interface Fermi-level pinning effect. It is confirmed that an inserted graphene layer prevents atomic interdiffusion to… read more here.

Keywords: schottky contact; layer; graphene; level ... See more keywords
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Metal–Semiconductor Ohmic and Schottky Contact Interfaces for Stable Li-Metal Electrodes

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Published in 2021 at "ACS energy letters"

DOI: 10.1021/acsenergylett.1c00150

Abstract: Li-metal is an attractive anode material for next-generation batteries owing to its high capacity and low reduction potential. Unfortunately, it undergoes dendritic growth, which limits its develop... read more here.

Keywords: metal semiconductor; metal; semiconductor ohmic; ohmic schottky ... See more keywords
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Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure

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Published in 2021 at "AIP Advances"

DOI: 10.1063/5.0043981

Abstract: A graphene Schottky contact was fabricated on an AlGaN/GaN heterostructure and subsequently analyzed. The calculated and experimentally measured Schottky barrier heights (SBHs) determined using the theoretical Schottky–Mott model, the thermionic emission model, the temperature-dependent current–voltage… read more here.

Keywords: schottky barrier; schottky contact; algan gan; gan heterostructure ... See more keywords
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Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

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Published in 2022 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/ac612a

Abstract: Schottky diodes based on Be-doped p-type AlGaAs were grown by molecular beam epitaxy and their current–voltage (I–V) and capacitance–voltage (C–V) characteristics measured. The Schottky and Ohmic contacts are Ti/Au and Au/Ni/Au, respectively. The effect of… read more here.

Keywords: effect; schottky; interface states; schottky contact ... See more keywords
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Leakage current suppression and breakdown voltage enhancement in GaN-on-GaN vertical Schottky barrier diodes enabled by oxidized platinum as Schottky contact metal

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Published in 2022 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/ac65aa

Abstract: In this work, the oxidized metal PtO x was employed as the Schottky contact metal in the fabrication of gallium nitride (GaN)-on-GaN vertical Schottky barrier diodes (SBDs). Compared with the GaN SBD with just Pt… read more here.

Keywords: schottky; voltage; pto; schottky contact ... See more keywords
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Raised Body Doping-Less 1T-DRAM With Source/Drain Schottky Contact

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Published in 2019 at "IEEE Journal of the Electron Devices Society"

DOI: 10.1109/jeds.2019.2896412

Abstract: In this paper, we propose a novel structure of doping-less 1T-DRAM with raised body and Schottky contact to source/drain regions which uses thermionic emission to generate electrons and holes. As the device is free from… read more here.

Keywords: less dram; schottky contact; doping less; source drain ... See more keywords