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Published in 2020 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-020-04006-1
Abstract: In order to see an interlayer on the electrical parameters and conduction mechanisms (CMs), both the metal–semiconductor (MS) and Au/(MgO-PVP)/n-Si Schottky diodes (SDs) were grown onto the same wafer with 〈100〉 orientation and 350 μm…
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Keywords:
conduction mechanisms;
study electrical;
comparative study;
schottky diodes ... See more keywords
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Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08473-4
Abstract: Au/PVA/n-GaAs (MPS) type Schottky diodes (SDs) were fabricated and investigated in a temperature range of 80–360 K to explain their possible conduction mechanisms (CMs). Three distinct linear regions with different slopes were observed in ln(I)–V…
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Keywords:
temperature range;
temperature;
range;
schottky diodes ... See more keywords
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Published in 2020 at "Current Applied Physics"
DOI: 10.1016/j.cap.2020.07.007
Abstract: Abstract We make a new type of bipolar Schottky diodes using the p-type La2/3Sr1/3VO3 (LSVO)/n-TiO2 heterostructure. The p-type LSVO metal thin films are grown on various substrates using radio frequency magnetron co-sputtering deposition. We find…
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Keywords:
tio2;
new type;
schottky diodes;
la2 3sr1 ... See more keywords
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Published in 2018 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2017.11.035
Abstract: Abstract In this research, the anneal induced transformations of radiation defects have been studied in n-type and p-type CZ and FZ Si samples, irradiated with relativistic protons (24 GeV/c) and pions (300 MeV/c) using particle fluences up…
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Keywords:
radiation defects;
induced transformations;
schottky diodes;
anneal induced ... See more keywords
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Published in 2021 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105339
Abstract: Abstract The UV photocurrent response of thin films of wide bandgap semiconductors such as zinc oxide (ZnO) can be applied to a great number of electronic devices aiming applications in environmental sensing or UV-detection. Electronic…
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Keywords:
response;
schottky diodes;
zno;
zinc oxide ... See more keywords
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Published in 2019 at "Organic Electronics"
DOI: 10.1016/j.orgel.2019.02.024
Abstract: Abstract IGZO-based Schottky diodes have applications in high-speed electronics. However, these devices generally require noble metals to form a Schottky contact, which was one of the problems for their early commercialization. This study demonstrates the…
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Keywords:
carbon paste;
low cost;
igzo;
schottky diodes ... See more keywords
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Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.05.054
Abstract: Abstract In the present paper, Bismuth (Bi) doped ZnO thin film have been deposited using sol gel spin coating technique to produce p-type ZnO films on n-Si substrate. The deposited Bi doped ZnO thin films…
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Keywords:
thin films;
schottky diodes;
zno;
zno thin ... See more keywords
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Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.106276
Abstract: Abstract In this paper, two different cleaning methods before nitridation of the Au/GaN/n-GaAs Schottky diodes are investigated. Batch 1 is cleaned chemically and followed by ionic bombardment in an ultra-high vacuum chamber (UHV). On the…
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Keywords:
ionic bombardment;
schottky diodes;
gaas schottky;
gan gaas ... See more keywords
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Published in 2019 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927619011930
Abstract: GaN-based devices are of much current interest for high-power electronics due to their superior physical and electrical properties, which include high electric breakdown field, high operation temperature, large band gap, and high electron velocity. GaN…
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Keywords:
gan substrates;
uid gan;
microscopy;
schottky diodes ... See more keywords
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Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c12638
Abstract: High-performance In-Ga-Zn-O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 °C. IGZO:H was prepared by Ar + O2 + H2 sputtering. IGZO:H SDs on a glass…
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Keywords:
schottky barrier;
schottky diodes;
schottky;
igzo ... See more keywords
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Published in 2022 at "ACS Applied Materials & Interfaces"
DOI: 10.1021/acsami.1c22856
Abstract: Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have…
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Keywords:
radiofrequency schottky;
schottky diodes;
cuscn;
based doped ... See more keywords