Articles with "schottky diodes" as a keyword



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A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer

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Published in 2020 at "Journal of Materials Science: Materials in Electronics"

DOI: 10.1007/s10854-020-04006-1

Abstract: In order to see an interlayer on the electrical parameters and conduction mechanisms (CMs), both the metal–semiconductor (MS) and Au/(MgO-PVP)/n-Si Schottky diodes (SDs) were grown onto the same wafer with   〈100〉 orientation and 350 μm… read more here.

Keywords: conduction mechanisms; study electrical; comparative study; schottky diodes ... See more keywords
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On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K

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Published in 2020 at "Journal of Electronic Materials"

DOI: 10.1007/s11664-020-08473-4

Abstract: Au/PVA/n-GaAs (MPS) type Schottky diodes (SDs) were fabricated and investigated in a temperature range of 80–360 K to explain their possible conduction mechanisms (CMs). Three distinct linear regions with different slopes were observed in ln(I)–V… read more here.

Keywords: temperature range; temperature; range; schottky diodes ... See more keywords
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New type Schottky diodes based on the heterostructure of transition metal oxides: p-La2/3Sr1/3VO3/n-TiO2

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Published in 2020 at "Current Applied Physics"

DOI: 10.1016/j.cap.2020.07.007

Abstract: Abstract We make a new type of bipolar Schottky diodes using the p-type La2/3Sr1/3VO3 (LSVO)/n-TiO2 heterostructure. The p-type LSVO metal thin films are grown on various substrates using radio frequency magnetron co-sputtering deposition. We find… read more here.

Keywords: tio2; new type; schottky diodes; la2 3sr1 ... See more keywords
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Anneal induced transformations of defects in hadron irradiated Si wafers and Schottky diodes

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Published in 2018 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2017.11.035

Abstract: Abstract In this research, the anneal induced transformations of radiation defects have been studied in n-type and p-type CZ and FZ Si samples, irradiated with relativistic protons (24 GeV/c) and pions (300 MeV/c) using particle fluences up… read more here.

Keywords: radiation defects; induced transformations; schottky diodes; anneal induced ... See more keywords
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UV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT:PSS hydrid Schottky diodes

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Published in 2021 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2020.105339

Abstract: Abstract The UV photocurrent response of thin films of wide bandgap semiconductors such as zinc oxide (ZnO) can be applied to a great number of electronic devices aiming applications in environmental sensing or UV-detection. Electronic… read more here.

Keywords: response; schottky diodes; zno; zinc oxide ... See more keywords
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Rectified Schottky diodes that use low-cost carbon paste/InGaZnO junctions

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Published in 2019 at "Organic Electronics"

DOI: 10.1016/j.orgel.2019.02.024

Abstract: Abstract IGZO-based Schottky diodes have applications in high-speed electronics. However, these devices generally require noble metals to form a Schottky contact, which was one of the problems for their early commercialization. This study demonstrates the… read more here.

Keywords: carbon paste; low cost; igzo; schottky diodes ... See more keywords

Performance analysis of Schottky diodes based on Bi doped p-ZnO thin films

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Published in 2018 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2018.05.054

Abstract: Abstract In the present paper, Bismuth (Bi) doped ZnO thin film have been deposited using sol gel spin coating technique to produce p-type ZnO films on n-Si substrate. The deposited Bi doped ZnO thin films… read more here.

Keywords: thin films; schottky diodes; zno; zno thin ... See more keywords
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Comparative study of ionic bombardment and heat treatment on the electrical behavior of Au/GaN/n-GaAs Schottky diodes

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Published in 2019 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2019.106276

Abstract: Abstract In this paper, two different cleaning methods before nitridation of the Au/GaN/n-GaAs Schottky diodes are investigated. Batch 1 is cleaned chemically and followed by ionic bombardment in an ultra-high vacuum chamber (UHV). On the… read more here.

Keywords: ionic bombardment; schottky diodes; gaas schottky; gan gaas ... See more keywords
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Characterization of Etched and Grown GaN-GaN Schottky Diodes

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Published in 2019 at "Microscopy and Microanalysis"

DOI: 10.1017/s1431927619011930

Abstract: GaN-based devices are of much current interest for high-power electronics due to their superior physical and electrical properties, which include high electric breakdown field, high operation temperature, large band gap, and high electron velocity. GaN… read more here.

Keywords: gan substrates; uid gan; microscopy; schottky diodes ... See more keywords
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Record-High-Performance Hydrogenated In-Ga-Zn-O Flexible Schottky Diodes.

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Published in 2020 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.0c12638

Abstract: High-performance In-Ga-Zn-O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 °C. IGZO:H was prepared by Ar + O2 + H2 sputtering. IGZO:H SDs on a glass… read more here.

Keywords: schottky barrier; schottky diodes; schottky; igzo ... See more keywords
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Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN)

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Published in 2022 at "ACS Applied Materials & Interfaces"

DOI: 10.1021/acsami.1c22856

Abstract: Schottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have… read more here.

Keywords: radiofrequency schottky; schottky diodes; cuscn; based doped ... See more keywords