Effect of rare-earth Pr6O11 insulating layer on the electrical properties of Au/n-GaN Schottky electrode and its chemical and structural characterization
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DOI: 10.1007/s10854-019-02224-w
Abstract: An Au/Pr6O11/n-GaN metal/insulator/semiconductor (MIS) junction was prepared with a high-k praseodymium oxide insulator layer and probed its structural, chemical and electrical characteristics by XRD, TEM, XPS, I–V and C–V approaches. XRD, TEM and XPS examinations… read more here.
Keywords: mis junction; gan schottky; pr6o11; insulator ... See more keywords