Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit
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DOI: 10.1063/1.5034444
Abstract: A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x… read more here.
Keywords: figure merit; ga2o3 schottky; reverse breakdown; schottky rectifiers ... See more keywords
Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β-Ga2O3 Schottky rectifiers
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DOI: 10.1063/5.0052601
Abstract: Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and… read more here.
Keywords: ga2o3 schottky; schottky rectifiers; non equilibrium; doped ga2o3 ... See more keywords