Novel photoelectrochemically combined mechanical polishing technology for scratch-free 4H-SiC surface by using CeO2-TiO2 composite photocatalysts and PS/CeO2 core/shell abrasives
Sign Up to like & getrecommendations! Published in 2021 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2021.151141
Abstract: Abstract 4H-SiC is a promising next-generation semiconductor. To obtain a scratch-free SiC surface with less/no residual oxide layer at an ideal material removal rate (MRR), a novel photoelectrochemically combined mechanical polishing (PECMP) technique was proposed.… read more here.
Keywords: shell abrasives; surface; composite photocatalysts; scratch free ... See more keywords
Boring Tool Permitting Scratch-Free Removal
Sign Up to like & getrecommendations! Published in 2020 at "Russian Engineering Research"
DOI: 10.3103/s1068798x20080237
Abstract: The proposed boring head may be removed from the machined hole without scratching the wall. To prevent scratching, the head diameter may be adjusted by as much as 0.4 mm. The maximum accuracy of the… read more here.
Keywords: free removal; scratch free; permitting scratch; boring tool ... See more keywords