Investigation of Quantization Effects on RTS Due to Oxide Traps Induced by Channel Hot-Carrier-Stressing in pMOSFETs
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DOI: 10.1109/tdmr.2020.3018049
Abstract: Although it is the worst degradation mechanism, the effect of channel hot carrier (CHC) stressing on random telegraph signals (RTS) has not been given enough attention in pMOSFETs. We report on the effect of CHC… read more here.
Keywords: mobility; screened scattering; hot carrier; capture ... See more keywords