Selective Electron Beam Patterning of Oxygen‐Doped WSe2 for Seamless Lateral Junction Transistors
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DOI: 10.1002/advs.202202465
Abstract: Surface charge transfer doping (SCTD) using oxygen plasma to form a p‐type dopant oxide layer on transition metal dichalcogenide (TMDs) is a promising doping technique for 2D TMDs field‐effect transistors (FETs). However, patternability of SCTD… read more here.
Keywords: seamless lateral; doped wse2; beam; beam irradiation ... See more keywords