AC-SSRM 2-D Cross-Sectional Doping Profiling for DRAM Access Devices Contact Implants
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3020525
Abstract: The doping technologies and doping profiling metrologies are facing huge challenges for nonplanar or 3-D devices and structures. Ambient-controlled scanning spreading resistance microscopy (AC-SSRM) has been developed and well established for 2-D cross-sectional doping profiling… read more here.
Keywords: access devices; doping profiling; sectional doping; dram access ... See more keywords