Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET for improved gate leakages, analysis of circuit and noise performance
Sign Up to like & getrecommendations! Published in 2019 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2019.152924
Abstract: Abstract The leakages in off state, particularly Gate Induced Drain Leakage (GIDL) has been addressed and reduced by proposing a Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET. The shallow extensions create an insulating… read more here.
Keywords: surrounding gate; mosfet; noise; see mosfet ... See more keywords