Large single-crystal Ge-on-insulator by thermally-assisted (~400 °C) Si-seeded-pulse-laser annealing
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DOI: 10.1016/j.mssp.2016.10.033
Abstract: Abstract Low temperature (≤400 °C) formation of orientation-controlled large (≥10 µm) Ge-on-insulator (GOI) structures is desired to fabricate 3-dimensional large-scale integrated circuits (LSIs), where Ge-based functional devices are stacked on Si-LSIs. For this purpose, Si-seeded pulse-laser annealing… read more here.
Keywords: temperature; thermally assisted; laser annealing; seeded pulse ... See more keywords