A novel superjunction lateral double-diffused MOS with segmented buried P-layer
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DOI: 10.1016/j.spmi.2018.01.019
Abstract: Abstract A novel superjunction (SJ) lateral double-diffused MOS (LDMOS) with charge compensation to obtain an ultralow specific on-resistance (Ron,sp) is proposed in this paper. Segmented Buried P-layer(SBP)SJ LDMOS introduces segmented buried P-layer between the drift… read more here.
Keywords: buried layer; segmented buried; layer; charge ... See more keywords