Alloy segregation at stacking faults in zincblende GaN heterostructures
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Applied Physics"
DOI: 10.1063/5.0015157
Abstract: Current cubic zincblende III-Nitride epilayers grown on 3C-SiC/Si(001) substrates by metal-organic vapor-phase epitaxy contain a high density of stacking faults lying on the {111} planes. A combination of high-resolution scanning transmission electron microscopy and energy… read more here.
Keywords: segregation stacking; stacking faults; zincblende gan; faults zincblende ... See more keywords