Noise behaviour of δp+ Si1−xGex layer SELBOX TFET
Sign Up to like & getrecommendations! Published in 2019 at "Indian Journal of Physics"
DOI: 10.1007/s12648-019-01485-9
Abstract: AbstractThis paper explores an analysis of low- and high-frequency noise in a heterojunction, selective buried oxide (SELBOX) with high-k gate dielectric TFET. The electrical parameters for different doping concentrations, δp+ layer width and mole fractions… read more here.
Keywords: spectral density; selbox; noise behaviour; si1 xgex ... See more keywords
TCAD Simulation and Analysis of Selective Buried Oxide MOSFET Dynamic Power
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Low Power Electronics and Applications"
DOI: 10.3390/jlpea9040029
Abstract: Low power consumption has become one of the major requirements for most microelectronic devices and systems. Increasing power dissipation may lead to decreasing system efficiency and lifetime. The BULK metal oxide semiconductor field-effect transistor (MOSFET)… read more here.
Keywords: selbox; mosfet; power; power dissipation ... See more keywords