Analysis of single-event effects in selected BOX-based FDSOI transistor and inverter
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DOI: 10.1016/j.radphyschem.2021.109526
Abstract: Abstract The existence of buried oxide aggravates the self-heating effect (SHE) in fully depleted silicon-on-insulator (FDSOI) device. To reduce SHE, a new structure named selected BOX-based (SELBOX) FDSOI transistor is introduced in this work, and… read more here.
Keywords: single event; selected box; fdsoi transistor; transistor ... See more keywords