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Published in 2018 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-018-6576-z
Abstract: We report on the selective area epitaxy (SAE) of AlGaN/GaN microstructures in stretchable geometric patterns. We have investigated dependence of Al incorporation, lateral/sidewall growth profile and electrical properties of SAE heterostructures on Al/Ga source ratio…
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Keywords:
algan gan;
selective area;
geometry;
sae algan ... See more keywords
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Published in 2018 at "Nano Research"
DOI: 10.1007/s12274-018-1984-1
Abstract: Tapering of vapour-liquid-solid (VLS) grown nanowires (NWs) is a widespread phenomenon resulting from dynamics of the liquid droplet during growth anddirect vapour-solid (VS) growth on the sidewall. To investigate both effects in ahighly controlled way,…
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Keywords:
selective area;
diameter evolution;
gaas nanowires;
growth ... See more keywords
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Published in 2017 at "Optik"
DOI: 10.1016/j.ijleo.2017.04.092
Abstract: Abstract A two-section single stripe laser diode has been fabricated from a strained InGaAs/GaAs single quantum well heterostructure grown on GaAs substrate. The two sections have different band gap energies owing to selective area intermixing…
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Keywords:
laser;
diode fabricated;
selective area;
laser diode ... See more keywords
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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.10.032
Abstract: Abstract Severe melt-back etching has forced the epitaxy of GaN on Si to use an AlN buffer layer for growing high-quality two-dimensional layers, despite its high resistivity. Herein, we report a metal-based pre-orienting layer (POL)…
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Keywords:
gan nanostructures;
selective area;
area growth;
pre orienting ... See more keywords
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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.01.010
Abstract: Abstract We study the cathodoluminescence (CL) and the photoluminescence (PL) properties of In x Ga 1−x N/GaN quantum disks (QDisks) included in nanowires obtained by selective area sublimation from an In x Ga 1−x N/GaN…
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Keywords:
obtained selective;
gan quantum;
properties gan;
quantum disks ... See more keywords
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Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.10.009
Abstract: Abstract We report the growth of GaAs nanowires (NWs) on a Ge substrate using selective-area metal-organic vapor phase epitaxy (SA-MOVPE) for solar cell applications. Vertical GaAs NWs were aligned on a non-polar Ge(1 1 1) substrate by…
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Keywords:
growth;
movpe;
gaas nanowires;
gaas ... See more keywords
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Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.125181
Abstract: Abstract We present results on the selective area growth (SAG) of Gallium Nitride (GaN) nanowires on Si substrate without any buffer layer by radio frequency plasma-assisted molecular beam epitaxy. Full selectivity was achieved with a…
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Keywords:
growth;
gan nanowires;
molecular beam;
nanowires substrate ... See more keywords
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Published in 2020 at "Thin Solid Films"
DOI: 10.1016/j.tsf.2020.138125
Abstract: Abstract Selective–area growth of cubic GaN (c–GaN) layers grown on stripe–patterned GaAs (100) substrates by metalorganic vapor phase epitaxy was investigated. The formation of hexagonal phase was examined along with the growth morphology and the…
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Keywords:
phase;
growth;
stripe pattern;
selective area ... See more keywords
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Published in 2021 at "Nano letters"
DOI: 10.1021/acs.nanolett.1c00349
Abstract: Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approach in which…
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Keywords:
gaas;
selective area;
self catalyzed;
gaas nanowires ... See more keywords
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Published in 2022 at "Nano Letters"
DOI: 10.1021/acs.nanolett.2c00358
Abstract: Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin–orbit coupling that allows fast qubit operation, nanowire geometry and orientation can…
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Keywords:
transport selective;
nanowire networks;
hole transport;
transport ... See more keywords
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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c09594
Abstract: Atomic-scale information about the structural and compositional properties of novel semiconductor nanowires is essential to tailoring their properties for specific applications, but characterization at this length scale remains a challenging task. Here, quasi-1D InAs/InGaAs semiconductor…
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Keywords:
atomic scale;
microscopy;
selective area;
inas ingaas ... See more keywords