LAUSR

High performance selective buried double gate power MOSFET

Sign Up to like & get
recommendations!
1 Published in 2019 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/ab0c2f

Abstract: In this letter, we propose a dual laterally aligned poly-silicon selective buried gates power MOSFET (SBGP-MOSFET). The proposed structure significantly improves the ON resistance (R on)-breakdown voltage tradeoff, reduces gate-drain capacitance (C GD) and eliminates… read more here.

Keywords: gate drain; power mosfet; selective buried; gate ... See more keywords