Realization of Selector‐Memory Bi‐Functionality with Self‐Current Regulation Utilizing Poly‐Crystalline Based GST Electrolyte for Memristor Hardware Development
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202300975
Abstract: Conductive bridge random‐access memory (CBRAM) are two terminal devices that offer excellent switching performance. In addition, CBRAM shows various switching modes, including volatile threshold switching (TS) and nonvolatile threshold switching (N‐TS). These properties expand its… read more here.
Keywords: memory functionality; selector memory; gst; memory ... See more keywords
Write Endurance Enhanced and Large Memory Window of GeSe-Based Selector-Only Memory With Indium Doping Scheme
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2024.3495778
Abstract: Chalcogenide-based novel Selector-Only Memory (SOM) has attracted much attention due to its fast-speed performance and manufacturability. However, the lack of endurance, caused by the polarity operation, needs to be improved. Here, we investigate an indium… read more here.
Keywords: endurance; memory; write endurance; indium doping ... See more keywords