Self-compliance and forming-free memristor arrays with a SiO2 scavenging barrier for energy-efficient neuromorphic computing
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DOI: 10.1088/1361-6463/ae01b5
Abstract: In this work, low-power RRAM (Resistive random-access memory) devices were characterized by a SiO2 layer serving as an oxygen scavenging barrier, which suppresses conductive filament overgrowth and reduces operation current and power consumption. Additionally, the… read more here.
Keywords: forming free; compliance forming; scavenging barrier; self compliance ... See more keywords