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Published in 2019 at "Ecology and Evolution"
DOI: 10.1002/ece3.5043
Abstract: Abstract In the rhizosphere, plants are exposed to a multitude of different biotic and abiotic factors, to which they respond by exuding a wide range of secondary root metabolites. So far, it has been unknown…
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Keywords:
semi polar;
root;
root exudates;
species specific ... See more keywords
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Published in 2017 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-017-7399-z
Abstract: The semi-polar $$\left(11\overline{2}2\right)$$112¯2 plane Al0.42Ga0.58N films were successfully grown on $$\left(10\overline{1}0\right)$$101¯0-oriented m-plane sapphire substrates for the first time with an indium (In)-surfactant-assisted metal–organic chemical vapor deposition (MOCVD) technology. The crystal orientation, surface morphology, and electrical…
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Keywords:
polar left;
overline right;
semi polar;
left overline ... See more keywords
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Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.125423
Abstract: Abstract GaN crystals were grown on non-polar and semi-polar HVPE GaN seeds by basic ammonothermal method. Stress distributions were investigated in cross-section of (1 1 −2 0) plane, (1 0 −1 0) plane, (2 0 −2 1) plane and (1 0 −1 1) plane GaN crystal. The…
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Keywords:
semi polar;
hvpe;
non polar;
gan ... See more keywords
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Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-10923-9
Abstract: Pushing the emission wavelength of efficient ultraviolet (UV) emitters further into the deep-UV requires material with high crystal quality, while also reducing the detrimental effects of built-in electric fields. Crack-free semi-polar $$\mathrm{(11}\bar{2}\mathrm{2)}$$(112¯2) AlxGa1−xN epilayers with…
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Keywords:
polar mathrm;
semi polar;
mathrm 112;
bar mathrm ... See more keywords
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Published in 2019 at "Nanoscale"
DOI: 10.1039/c9nr02823d
Abstract: The growth of semi-polar (112[combining macron]2) GaN/InGaN multiple-quantum-well (MQW) co-axial heterostructure shells around m-axial GaN core nanowires on a Si substrate using MOCVD is reported for the first time. The core GaN nanowire and GaN/InGaN…
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Keywords:
gan ingan;
semi polar;
polar 112;
gan ... See more keywords
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Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab08bf
Abstract: A two-step approach has been developed for the growth of semi-polar (11–22) GaN on patterned (113) silicon substrates, which effectively eliminates Ga melt-back etching at a high temperature, one of the most challenging issues. A…
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Keywords:
polar gan;
two step;
semi polar;
113 silicon ... See more keywords
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Published in 2022 at "Materials"
DOI: 10.3390/ma16010151
Abstract: In this work, the properties of ZnO films of 100 nm thickness, grown using atomic layer deposition (ALD) on a–(100) and c–(001) oriented Al2O3 substrate are reported. The films were grown in the same growth…
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Keywords:
zno films;
zno al2o3;
zno;
polar zno ... See more keywords