2D Electron Gas‐Induced the Lowered Tunneling Barrier and Ohmic Behavior Simultaneously in 2D Metal‐Semiconductor Contacts
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202513567
Abstract: 2D materials have the advantages of dangling‐bond‐free interfaces, facilitating Fermi‐level depinning, and could be utilized for achieving ohmic contacts in metal‐semiconductor contacts. However, the additional tunneling barrier, resulting from the large van der Waals (vdW)… read more here.
Keywords: tunneling barrier; gas induced; electron gas; semiconductor contacts ... See more keywords