Multiphoton Lithography of Organic Semiconductor Devices for 3D Printing of Flexible Electronic Circuits, Biosensors, and Bioelectronics
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202200512
Abstract: In recent years, 3D printing of electronics have received growing attention due to their potential applications in emerging fields such as nanoelectronics and nanophotonics. Multiphoton lithography (MPL) is considered the state‐of‐the‐art amongst the microfabrication techniques… read more here.
Keywords: organic semiconductor; multiphoton lithography; lithography organic; semiconductor devices ... See more keywords
Increasing the reliability of wind turbines using condition monitoring of semiconductor devices: a review
Sign Up to like & getrecommendations! Published in 2018 at "Iet Renewable Power Generation"
DOI: 10.1049/iet-rpg.2017.0477
Abstract: The majority of electrical failures in wind turbines occur in the generator-side semiconductor devices. This is due to temperature swings affecting the layers of insulated-gate bipolar transistors in different ways; these effects are aggravated by… read more here.
Keywords: semiconductor devices; condition monitoring; wind turbines; temperature ... See more keywords
Perspective on nanoheat generation and dissipation in semiconductor devices
Sign Up to like & getrecommendations! Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0293553
Abstract: In advanced microelectronics, heat originates within nanoscale transistor channels, where field-driven electrons accelerate and scatter before equilibrating with the lattice—forming highly localized hotspots. Heat then dissipates through mechanisms ranging from angstrom-scale phonon interactions to packaging-level… read more here.
Keywords: generation; nanoheat generation; semiconductor devices; perspective nanoheat ... See more keywords
Dielectric Engineering With the Environment Material in 2-D Semiconductor Devices
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2018.2803161
Abstract: A theoretical study that highlights the dielectric constant modulation effect of the surrounding environment material (EM) on 2-D semiconductor devices is presented. With graphene nanoribbon as the vehicle, it is shown that the dielectric constant… read more here.
Keywords: semiconductor devices; material; dielectric constant; dielectric engineering ... See more keywords
Achieving N/P Doping of MoS₂ Through ZnO Interface Engineering in Heterostructures for Semiconductor Devices
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2025.3594757
Abstract: The aim of this study is to explore the electronic properties of the MoS2/ZnO heterostructure and their potential applications in semiconductor devices. We analyzed the impact of N/P doping on electronic properties of ZnO structures… read more here.
Keywords: semiconductor; mos zno; doping mos; semiconductor devices ... See more keywords
A High-Efficiency Isolated PFC AC-DC Topology with Reduced Number of Semiconductor Devices
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2021.3060193
Abstract: A new three-level isolated ac-dc power factor correction (PFC) topology with a minimum number of semiconductor devices is the focus of this paper. This topology provides a high input power factor (PF), soft-switching, and higher… read more here.
Keywords: high efficiency; number semiconductor; topology; pfc topology ... See more keywords
Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Vehicular Technology Magazine"
DOI: 10.1109/mvt.2021.3112943
Abstract: In recent years, researchers have been attracted to the application of wide-bandgap (WBG) power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) in electric vehicle (EV) applications. Their advantages over Si power… read more here.
Keywords: semiconductor devices; wbg power; power semiconductor; electric vehicle ... See more keywords
On Diagnosing the Aging Level of Automotive Semiconductor Devices
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Circuits and Systems II: Express Briefs"
DOI: 10.1109/tcsii.2016.2601959
Abstract: Semiconductor aging is a serious threat to the reliability of a system. We address the aging level of semiconductor components by describing the degree of semiconductor aging under certain operating conditions, including voltage, frequency, temperature,… read more here.
Keywords: diagnosing aging; automotive semiconductor; semiconductor; semiconductor devices ... See more keywords
Efficient TCAD Thermal Analysis of Semiconductor Devices
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2021.3076753
Abstract: We present an efficient numerical technique for the temperature-dependent TCAD analysis of semiconductor devices. The approach is based on the linearization of the physical model around a nominal temperature operating condition, and exploits the Green’s… read more here.
Keywords: analysis semiconductor; thermal analysis; temperature; semiconductor devices ... See more keywords
Coordinated PWM-Based Active Thermal Control for Power Semiconductor Devices in Parallel Grid-Tied Inverters
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2024.3452722
Abstract: This article proposes a new active thermal control method for power semiconductor devices in parallel grid-tied inverters using coordinated pulsewidth modulation (PWM), which breaks the limitation that the PWM-based active thermal control cannot reduce the… read more here.
Keywords: power semiconductor; thermal control; semiconductor devices; power ... See more keywords
A 3-D Theoretical Model of Thermal Breakdown in Semiconductor Devices Under Multiple Pulses
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Plasma Science"
DOI: 10.1109/tps.2019.2946457
Abstract: The preexisting theoretical modeling of thermal breakdown in semiconductor devices under a single pulse is summarized, through which the relationship between failure power and pulsewidth, as well as the frequency can be obtained. In order… read more here.
Keywords: thermal breakdown; semiconductor; multiple pulses; breakdown semiconductor ... See more keywords