A ferroelectric semiconductor field-effect transistor
Sign Up to like & getrecommendations! Published in 2018 at "Nature Electronics"
DOI: 10.1038/s41928-019-0338-7
Abstract: Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are potentially of use… read more here.
Keywords: field effect; ferroelectric semiconductor; semiconductor field;
Metal–insulator–semiconductor field-effect transistors (MISFETs) using p-type SnS and nanometer-thick Al2S3 layers
Sign Up to like & getrecommendations! Published in 2017 at "RSC Advances"
DOI: 10.1039/c7ra00041c
Abstract: Novel and cost-effective metal–insulator semiconductor field-effect transistor (MISFET) devices were fabricated using non-toxic tin mono sulfide (SnS) as the active layer sandwiched between aluminium and silver contacts with an unintentionally grown aluminium sulfide (Al2S3) interface… read more here.
Keywords: semiconductor field; insulator semiconductor; field effect; metal insulator ... See more keywords
Hysteresis-free MoS2 metal semiconductor field-effect transistors with van der Waals Schottky junction
Sign Up to like & getrecommendations! Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/abd2e8
Abstract: Hysteresis-free and steep subthreshold swing (SS) are essential for low-power reliable electronics. Herein, MoS2 metal semiconductor field-effect transistors are fabricated with GeSe/MoS2 van der Waals Schottky junction as a local gate, in which the rectification… read more here.
Keywords: semiconductor field; mos2 metal; hysteresis free; effect transistors ... See more keywords
High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2019.2942967
Abstract: Schottky diodes and metal-semiconductor field-effect transistors (MESFETs) are fabricated on a quite smooth and high boron doping level diamond epitaxial layer. Forward current density maximum for the Schottky diode is 0.6 A cm−2 with the… read more here.
Keywords: semiconductor field; metal semiconductor; boron; effect transistors ... See more keywords