Dislocation structure and mobility in the layered semiconductor InSe: a first-principles study
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DOI: 10.1088/2053-1583/ac207b
Abstract: The structure and mobility of dislocations in the layered semiconductor InSe is studied within a multiscale approach based on generalized Peierls–Nabarro model with material-specific parametrization derived from first principles. The plasticity of InSe turns out… read more here.
Keywords: inse; semiconductor inse; layered semiconductor; structure mobility ... See more keywords