Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands
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DOI: 10.1134/s1063782618050056
Abstract: We report on fabrication and studies of composite heterostuctures consisting of an Al0.55Ga0.45N/Al0.8Ga0.2N quantum well and surface Al nanoislands, grown by plasma-assisted molecularbeam epitaxy on c-sapphire substrates. The influence of a substrate temperature varied between… read more here.
Keywords: algan quantum; semiconductor nanoheterostructures; metal semiconductor; surface nanoislands ... See more keywords