Hot hole transfer at the plasmonic semiconductor/semiconductor interface.
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DOI: 10.1039/d2nr05044g
Abstract: Localized surface plasmon resonance (LSPR)-induced hot-carrier transfer provides an attractive alternative for light-harvesting using the full solar spectrum. This defect-mediated hot-carrier transfer is identical at the plasmonic semiconductor/semiconductor interface and can overcome the low efficiency… read more here.
Keywords: semiconductor semiconductor; trap states; semiconductor; hole transfer ... See more keywords