Articles with "semiconductor transition" as a keyword



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Metal‐to‐Semiconductor Transition and Electronic Dimensionality Reduction of Ca2N Electride under Pressure

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Published in 2018 at "Advanced Science"

DOI: 10.1002/advs.201800666

Abstract: Abstract The discovery of electrides, in particular, inorganic electrides where electrons substitute anions, has inspired striking interests in the systems that exhibit unusual electronic and catalytic properties. So far, however, the experimental studies of such… read more here.

Keywords: electronic dimensionality; ca2n; semiconductor transition; metal semiconductor ... See more keywords
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Effect of thickness on metal to semiconductor transition in La doped BaSnO3 films deposited on high mismatch LSAT substrates

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Published in 2019 at "Applied Physics Letters"

DOI: 10.1063/1.5082944

Abstract: 1% La doped BaSnO3 thin films of different thicknesses, ranging from 15 to 300 nm, were obtained on single crystal Lanthanum Aluminate-Strontium Aluminate Tantalate [LSAT(001)] substrates via Pulsed Laser Deposition. The films grow epitaxially on these… read more here.

Keywords: semiconductor transition; metal semiconductor; doped basno3; transition ... See more keywords
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Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films

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Published in 2020 at "IUCrJ"

DOI: 10.1107/s2052252519015458

Abstract: The effect of substrate temperature, growth rate and film thickness on the crystallographic characteristics of polycrystalline Bi thin films by molecular beam epitaxy and semimetal–semiconductor transition are discussed. Meanwhile, a structure-zone model and a two-transport-channels… read more here.

Keywords: growth; semimetal semiconductor; semiconductor transition; thin films ... See more keywords

First-Order Metal–Semiconductor Transition Triggered by Rattling Transition in Tetrahedrite Cu12Sb4S13: Cu-Nuclear Magnetic Resonance Studies

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Published in 2019 at "Journal of the Physical Society of Japan"

DOI: 10.7566/jpsj.88.054710

Abstract: Tetrahedrite Cu12Sb4S13 shows a metal–semiconductor transition (MST) at TMST = 85 K. We have studied the mechanism of the MST by measurements of Cu-NMR. Above TMST, the Cu-NMR spectrum consists of ... read more here.

Keywords: tetrahedrite cu12sb4s13; metal semiconductor; transition; semiconductor transition ... See more keywords