560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates.
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DOI: 10.1364/oe.387561
Abstract: We demonstrate InGaN-based semipolar 560 nm micro-light-emitting diodes with 2.5% EQE on high-quality and low-defect-density (20-21) GaN templates grown on scalable and low-cost sapphire substrates. Through transmission electron microscopy observations, we discuss how the management of… read more here.
Keywords: sapphire; semipolar gan; gan; defect density ... See more keywords
Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations
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DOI: 10.7567/apex.11.036501
Abstract: Semipolar InGaN 432 nm light-emitting diodes were demonstrated on semipolar GaN templates grown on patterned sapphire. Packaged devices exhibited a light output power of 4.7 mW at 100 A/cm2 and a peak external quantum efficiency… read more here.
Keywords: extraction; semipolar gan; light extraction; emitting diodes ... See more keywords