Ambipolar charge sensing of few-charge quantum dots
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DOI: 10.1103/physrevb.101.201301
Abstract: We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor.… read more here.
Keywords: quantum dots; sensing charge; charge quantum; charge ... See more keywords