Achieving high sensing in 0.5 nA for the driving pixel currents in AMOLEDs with settling time of 7 µs by a new external current sensing circuit
Sign Up to like & getrecommendations! Published in 2020 at "Microsystem Technologies"
DOI: 10.1007/s00542-020-04859-w
Abstract: A new external current sensing circuit with baseline compensation for the active matrix organic light emitting diode (AMOLED) display is developed herein to achieve the sensing precision of 0.5 nA in pixel with 7 µs of settling… read more here.
Keywords: time; settling time; circuit; sensing circuit ... See more keywords
A Sneak Current Compensation Scheme With Offset Cancellation Sensing Circuit for ReRAM-Based Cross-Point Memory Array
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2021.3133945
Abstract: A sneak current compensation scheme with offset cancellation sensing circuit (SCC-OCSC) adopting dummy bitline and wordline is proposed to resolve sneak current problem in the cross-point memory array. The sneak current degrades sensing yield because… read more here.
Keywords: scc ocsc; offset cancellation; scheme; sensing circuit ... See more keywords
A Dynamic Reference and Variation-Tolerant Sensing Circuit for Deep Nanometer STT-MRAM
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2020.3019511
Abstract: STT-MRAM has received wide attention with its promising properties as the next generation memory. Over the years, with entering into nanometer technology, as process-temperature-voltage (PTV) variations being intensified increasingly, the read reliability of STT-MRAM becomes… read more here.
Keywords: dynamic reference; sensing circuit; stt mram; circuit ... See more keywords
A Timing-Based Split-Path Sensing Circuit for STT-MRAM
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DOI: 10.3390/mi13071004
Abstract: Spin-transfer torque magnetoresistive random access memory (STT-MRAM) applications have received considerable attention as a possible alternative for universal memory applications because they offer a cost advantage comparable to that of a dynamic RAM with fast… read more here.
Keywords: based split; split path; stt mram; timing based ... See more keywords