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   Articles with "sensing circuit" as a keyword



Achieving high sensing in 0.5 nA for the driving pixel currents in AMOLEDs with settling time of 7 µs by a new external current sensing circuit

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recommendations! Published in 2020 at "Microsystem Technologies"

DOI: 10.1007/s00542-020-04859-w

Abstract: A new external current sensing circuit with baseline compensation for the active matrix organic light emitting diode (AMOLED) display is developed herein to achieve the sensing precision of 0.5 nA in pixel with 7 µs of settling… read more here.

Keywords: time; settling time; circuit; sensing circuit ... See more keywords

Wavelength Division Multiplexing Multi-Channel Sensing Circuit Using Si on Insulator Platform

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recommendations! Published in 2025 at "IEEE Photonics Journal"

DOI: 10.1109/jphot.2025.3576348

Abstract: Multi-channel sensing circuit utilizing wavelength division multiplexing is proposed using silicon on insulator platform. The circuit consists of four sections that can be decomposed into a bandpass (BP) filter and a sensing ring resonator (RR).… read more here.

Keywords: circuit; wavelength division; channel sensing; division multiplexing ... See more keywords

A Sneak Current Compensation Scheme With Offset Cancellation Sensing Circuit for ReRAM-Based Cross-Point Memory Array

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recommendations! Published in 2022 at "IEEE Transactions on Circuits and Systems I: Regular Papers"

DOI: 10.1109/tcsi.2021.3133945

Abstract: A sneak current compensation scheme with offset cancellation sensing circuit (SCC-OCSC) adopting dummy bitline and wordline is proposed to resolve sneak current problem in the cross-point memory array. The sneak current degrades sensing yield because… read more here.

Keywords: scc ocsc; offset cancellation; scheme; sensing circuit ... See more keywords

A Dynamic Reference and Variation-Tolerant Sensing Circuit for Deep Nanometer STT-MRAM

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recommendations! Published in 2020 at "IEEE Transactions on Nanotechnology"

DOI: 10.1109/tnano.2020.3019511

Abstract: STT-MRAM has received wide attention with its promising properties as the next generation memory. Over the years, with entering into nanometer technology, as process-temperature-voltage (PTV) variations being intensified increasingly, the read reliability of STT-MRAM becomes… read more here.

Keywords: dynamic reference; sensing circuit; stt mram; circuit ... See more keywords

A Timing-Based Split-Path Sensing Circuit for STT-MRAM

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recommendations! Published in 2022 at "Micromachines"

DOI: 10.3390/mi13071004

Abstract: Spin-transfer torque magnetoresistive random access memory (STT-MRAM) applications have received considerable attention as a possible alternative for universal memory applications because they offer a cost advantage comparable to that of a dynamic RAM with fast… read more here.

Keywords: based split; split path; stt mram; timing based ... See more keywords