1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor
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DOI: 10.1109/led.2020.2964773
Abstract: A 1.2 kV rated 4H-SiC SenseFET structure with monolithically integrated sensing resistor is proposed and experimentally demonstrated. The SenseFET was fabricated on a 6-inch SiC wafer using the same fabrication process as the conventional MOSFET,… read more here.
Keywords: sic sensefet; integrated sensing; sensing resistor; monolithically integrated ... See more keywords