Efficient humidity-sensitive electrical response of annealed lithium substituted nickel ferrite (Li–NiFe2O4) nanoparticles under ideal, real and corrosive environments
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-018-9987-y
Abstract: The Li–NiFe2O4 nanoparticles have been prepared via simple cost effective chemical co-precipitation method. X-ray diffraction analysis affirms the cubic spinel structure and particle size is ~ 32 nm. SEM and TEM analysis were revealed the needle shape… read more here.
Keywords: humidity sensitive; efficient humidity; nife2o4 nanoparticles; sensitive electrical ... See more keywords
Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage SiC and Si Devices
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2021.3054018
Abstract: This article presents six groups of dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The physical mechanisms of the temperature dependence of these parameters are analyzed with the… read more here.
Keywords: voltage; medium voltage; dynamic temperature; temperature ... See more keywords
Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2017.2745442
Abstract: This paper proposes the adoption of the inherent emitter stray inductance $L_{{\rm{eE}}}$ in high-power insulated gate bipolar transistor modules as a new dynamic thermo-sensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP… read more here.
Keywords: high power; emitter stray; thermo sensitive; stray inductance ... See more keywords
Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2019.2950311
Abstract: The temperature-sensitive electrical parameters (TSEPs) have been used in silicon carbide (SiC) mosfets junction temperature measurement for over-temperature protection and condition monitoring. However, the device aging can affect the TSEPs and thus leads to false… read more here.
Keywords: electrical parameters; sic mosfets; temperature; inline formula ... See more keywords