Prediction of single event upset critical charge and sensitive volume depth by energy deposition analysis of low energy protons
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DOI: 10.1080/10420150.2020.1806838
Abstract: Single Event Upset (SEU) critical charge and sensitive volume depth of 65-nm CMOS bulk SRAM are predicted through energy deposition analysis of low energy protons. The deposited energy distributions of protons calculated by GEANT4 are… read more here.
Keywords: sensitive volume; critical charge; energy; volume depth ... See more keywords