Study of the SET switching event of VCM-based memories on a picosecond timescale
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DOI: 10.1063/5.0003840
Abstract: In this paper, we present an approach of measuring the SET kinetics of redox-based resistive memories at timescales below 100 ps. Automatic measurements with an RF pulse generator and a source measure unit allow the consecutive… read more here.
Keywords: picosecond timescale; set kinetics; measured set; resistance ... See more keywords
SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials
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DOI: 10.3390/mi14030571
Abstract: The counter-electrode (CE) material in electrochemical metallization memory (ECM) cells plays a crucial role in the switching process by affecting the reactions at the CE/electrolyte interface. This is due to the different electrocatalytic activity of… read more here.
Keywords: hfo2 based; counter electrode; diffusive memristors; kinetics hfo2 ... See more keywords