Effect of the voltage ramp rate on the set and reset voltages of ReRAM devices
Sign Up to like & getrecommendations! Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.04.039
Abstract: The impact of the voltage ramp rate (RR) on the set and reset transition voltages of resistive RAM (ReRAM) devices that form part of one transistor-one resistor (1T1R) structures is investigated. Similar expressions for the… read more here.
Keywords: set reset; voltage ramp; reset voltages; ramp rate ... See more keywords
Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108113
Abstract: Abstract In this work, we have studied the set and the reset transitions in hafnium oxide-based metal–insulator-metal ReRAM devices using a capacitor discharge. Instead of applying a conventional voltage or current signal, we have discharged… read more here.
Keywords: capacitor; reram devices; discharge; reset transitions ... See more keywords
Improved resistive switching characteristics of Ag/Al:HfO x /ITO/PET ReRAM for flexible electronics application
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/abf662
Abstract: The Al-doped HfO x flexible resistive random access memory (ReRAM) device with Ag top electrode (TE) is fabricated on indium tin oxide (ITO) coated polyethylene terephthalate (PET) with low thermal budget process. The oxygen vacancies… read more here.
Keywords: ito pet; pet reram; hfo ito; flexible electronics ... See more keywords