Controlled Rotation of Electrically Injected Spins in a Nonballistic Spin-Field-Effect Transistor.
Sign Up to like & getrecommendations! Published in 2023 at "Nano letters"
DOI: 10.1021/acs.nanolett.3c00369
Abstract: Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin-field-effect transistor (sFET). To date, there have been only a few reports… read more here.
Keywords: field effect; transistor; spin field; controlled rotation ... See more keywords
2D Strain FET (2D-SFET)-Based SRAMs—Part II: Back Voltage-Enabled Designs
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2999317
Abstract: In Part I of this article, we had discussed the device characteristics of 2D Strain FET (2D-SFET) and 6T-SRAM with 2D-SFET used as a drop-in replacement for 2D-FET. Here (in Part II), we propose 2D-SFET-based… read more here.
Keywords: sfet; tex math; part; sfet based ... See more keywords
2-D Strain FET (2D-SFET) Based SRAMs—Part I: Device-Circuit Interactions
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3022344
Abstract: In this article, we analyze the characteristics of a recently conceived steep switching device 2-D Strain FET (2D-SFET) and present its circuit implications in the context of 6T-SRAM. We discuss the dependence of 2D-SFET characteristics… read more here.
Keywords: sfet; tex math; inline formula; fet sfet ... See more keywords